Abstract
A snapback-free Reverse-Conduction Silicon On Insulator Lateral Insulate Gate Bipolar Transistor (RC SOI-LIGBT) with Adjustable Carrier Technology (ACT LIGBT) is proposed in this paper. ACT LIGBT adds Semi-Insulating Polycrystalline Silicon (SIPOS) material on the extended gate dielectric, and introduces the potential of the surface SIPOS into the P-type drift region (P-Drift) through SiO2 trenches. ACT LIGBT generates the inversion layer of electrons in the P-Drift due to the linear potential distribution brought by the high resistance characteristic of SIPOS, resulting in the adjustment of the number of electrons and holes, and forming the technology of ACT. Additionally, ACT LIGBT adds a hole extraction path during it turned off. Meanwhile, compared to SSA LIGBT, ACT LIGBT optimized the BV (700V) by 34 %, while also optimizing the Von (1.69V) by 25 %, turn-off time (toff = 12ns) by 92 %, turn-off loss (Eoff = 0.69 mJ/cm2) by 79 %, and reverse recovery charge (Qrr = 32.98 μC/cm2) by 32.5 %, ultimately achieving a better compromise relationship among BV, Von, toff, Eoff, and Qrr.
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