Abstract

This paper aims to model Parasitic Light Sensitivity (PLS) in Global Shutter CMOS Image Sensors (GS-CIS) through separation of the optical problem from the carriers motion one, reducing required simulation. Finite-Differences Time-Domain (FDTD) simulations are used to solve the optical problem, while photo-generated carriers motion is modeled as a straight line, with limited influence of the local electric field. Though not showing perfect agreement with experimental data, the model can be used for analyzing the influence of some key parameters on PLS for GS-CIS optimization.

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