A 1.8e $^{-}_{\mathrm {rms}} $ Temporal Noise Over 110-dB-Dynamic Range 3.4 $\mu \text{m}$ Pixel Pitch Global-Shutter CMOS Image Sensor With Dual-Gain Amplifiers SS-ADC, Light Guide Structure, and Multiple-Accumulation Shutter

Abstract

A 1.8e $^{-}_{\mathrm {rms}} $ temporal noise over 110 dB dynamic range 3.4 $\mu \text{m}$ pixel pitch global shutter (GS) CMOS image sensor (CIS) single-slope analog digital converters (ADCs) with dual-gain amplifier (SSDG-ADC), light guide (LG) structure, and multiple-accumulation shutter has been developed for various accuracy required applications. The newly developed CIS pixel achieves low noise, high saturation, high sensitivity, and high frame rate with seamless GS function. Low noise, high saturation, and high frame rate are realized by small photodiode, large charge-domain memory, and seamless multiple-accumulation readout procedure with SSDG-ADC. Furthermore, high sensitivity is realized by the optimized shape LG structure. The GS CIS is fabricated in a 130 nm 1Poly-Si 4Metal with light shield CMOS process. This image sensor achieves 1.8e $^{-}_{\mathrm {rms}} $ temporal noise, 16 200e− full-well capacity with 60 fps multiple-accumulation and 28 000e−/lx $\cdot \text{s}$ sensitivity. This image sensor also realizes high-dynamic range readout procedure and in-pixel coded exposure for deblurred images. We also describe the examination results about the relationship of the sensitivity, parasitic light sensitivity, and LG structure.