A 0.61 e-noise global shutter CMOS image sensor with two-stage charge transfer pixels

Abstract

A low-noise global shutter (GS) CMOS image sensor (CIS) with two-stage charge transfer (2-CT) structure is presented. The low-noise wide dynamic range performance of the proposed pixel has been demonstrated by using column-parallel folding integration (FI)/cyclic ADCs. The GS image sensor with 5.6μm-pitch 1200 × 900 pixels is implemented with a 0.11 μm CIS technology. The noise and dynamic range are measured to be 0.61 e− rms and 81 dB, respectively.