Abstract
A fast and soft reverse recovery diode with a Punch-Through (PT) NPN structure is proposed and experimentally demonstrated. The structure features a P-type Schottky contact, a PT-NPN region for electron extraction, and a trench region with the bottom surrounded by a P-layer. Compared with conventional Self-adjusting P Emitter Efficiency Diode (SPEED), the proposed PT-NPN diode provides a much larger softness factor <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${S}$ </tex-math></inline-formula> (+23%), a shorter reverse recovery time <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${T}_{\text {rr}}$ </tex-math></inline-formula> (−5%), and a much reduced reverse recovery charge <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${Q}_{\text {rr}}$ </tex-math></inline-formula> (−20%) at nominal current.
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