Abstract
Fast (10ns) and low voltage (2V) programming of Cu atom switch has been demonstrated in a 1Mb switch array for the first time. A newly developed redox-control buffer of Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</sub> Ti <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> leads to extremely steep slope switching of voltage dependent time-to-ON-state (56mV/decade), by eliminating metallic Al residues at the Cu surface. The programmed ON-state shows long lifetimes both under data-retention test at 260°C and DC stress test (I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> =140μA) at 125°C. A redox-control technology is indispensable for conducting bridges used in a low-power, nonvolatile programmable logic (NPL).
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