Abstract
The authors describe the technology development leading to a family of high-electron-mobility transistor (HEMT) monolithic low-noise amplifiers (LNAs), and present modeled and measured performance data on LNAs covering the 2-20 GHz frequency band. These amplifiers achieve noise figures comparable to their counterpart in hybrid HEMT technology. The amplifiers are configured in a cascadable design, with simultaneous low input and output VSWR, and flat gain response. Performance results include measured and modeled data for a 2-7 GHz LNA with 2.5-dB noise figure, a 2-20-GHz distributed amplifier with 9.5-dB flat gain and 3.5-dB noise figure, and a 5-11-GHz and >3.5 balanced LNA with 10-dB gain and >
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