Abstract
A novel dynamic n-buffer insulated gate bipolar transistor (DB-IGBT) with double gates is proposed and analysed in detail by using two-dimensional numerical simulations. It is found that the turn-off energy loss of this device is reduced and the short-circuit performance is improved significantly compared to the optimised conventional IGBT. Similar to the NPT-IGBT, the switching performance of the DB-IGBT is insensitive to temperature. These advantages make this device an attractive candidate for high frequency high power application.
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