Abstract
A new p- n- n + diode model for circuit transient analysis is developed. In contrast to existing circuit models, this model reflects all step-recovery diode (SRD) effects during switching on and off, including “ramp” of slow recovery phase. It is accomplished by taking into account the dynamic physical phenomena in the p- n- n + diodes when switched. A non-linear dynamic diffusion capacitance of the diode model is determined by the dependence of the instantaneous base charge on the instantaneous diode voltage. The accuracy of the presented model is verified by comparison of the calculated and measured wave forms of some pulse circuits. The present model has been proved to be more accurate than SRD models previously published.
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