Abstract
Dynamics of the Dickson charge pump circuit are analyzed. The analytical results enable the estimation of the rise time of the output voltage and that of the power consumption during boosting. By using this analysis, the optimum number of stages to minimize the rise time has been estimated as 1.4 N/sub min/, where N/sub min/ is the minimum value of the number of stages necessary for a given parameter set of supply voltage, threshold voltage of transfer diodes, and boosted voltage. Moreover, the self-load capacitance of the charge pump, which should be charged up at the same time as the output load capacitance of the charge pump, has been estimated as about one-third of the total charge pump capacitance. As a result, the equivalent circuit of the charge pump has been modified. The analytical results are in good agreement with simulation by the iteration method, typically within 10% for the rise time and within 2% for the power consumption. In the case of a charge pump with MOS transfer transistors, the analytical results of the rise time agree with the SPICE simulation within 10%.
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