Abstract
We demonstrate here an oxide memory (OxiM) transistor as a new type of ferroelectric-gate field-effect transistor (FeFET), provided with a dual (top and bottom) channel, which can memorize channel conductance with a dynamic range exceeding 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sup> . This new transistor consists entirely of the following oxide-based thin films: SrRuO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> (bottom gate electrode); Pb(Zr, Ti)O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> (ferroelectric); ZnO (semiconductor); and SiON (gate insulator). A notable feature of the OxiM transistor is that two types of FET, i.e., a top gate-type thin-film transistor (top-TFT) and a bottom gate-type FeFET (bottom-FeFET), are stacked with a conduction layer of thin ZnO film in common. The channel conductance of the top-TFT and the bottom-FeFET can be controlled independently by the top gate and the bottom gate, respectively. We were successful in fabricating a nand memory circuit using serially connected OxiM transistors. The dual-gate structure allows disturb-free reading. Multivalued data can also be memorized in an OxiM transistor with a retention time of over 3.5 months.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
