Abstract
A dual-band front-end with two gain modes operating at the 2.4 Industrial Scientific and Medical (ISM) band and 5.15-GHz Unlicensed National Information Infrastructure (UNII) band has been demonstrated in a 0.18-/spl mu/m foundry CMOS process. The front-end uses a single set of RF blocks. A dual-band low noise amplifier (LNA) with two inputs is tuned to the two resonant frequencies by controlling the voltage on a switched resonator. The same switched resonator is also used to switch the LNA between high-gain and low-gain modes. In the 2.4-GHz high-gain mode, the front-end exhibits 39.8-dB maximum voltage gain, 1.5-dB double-side-band (DSB) noise figure, and -12.7-dBm input-referred IP/sub 3/ (IIP/sub 3/) while consuming 24 mW from a 1.8-V supply. In the 5.15-GHz high-gain mode, the front-end achieves 29.2-dB maximum voltage gain, 4.1-dB DSB noise figure and -4.1-dBm IIP/sub 3/ with 41-mW power consumption. The gains can be switched by 7 dB at 5.15 GHz and by 17 dB at 2.4 GHz.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
