A Drive Circuit Design Based on SIC MOSFET and Analysis of Problems

Abstract

As an important component of power converter, the maturity of power switching devices determines the development of power electronic devices. At present, the commonly used power switching devices such as MOSFET and IGBT are based on silicon semiconductor. Because of the insurmountable shortcomings of cinnamon materials, their development has been greatly restricted. Compared with traditional power devices based on silicon semiconductor materials, SIC MOSFET is one of the ideal devices to replace silicon MOSFET because of its low on-off voltage, fast switching speed and low driving capability. In this paper, a driving circuit based on SIC MOSFET is designed, and its power loss characteristics are tested and compared with those of silicon-based MOSFET with the same power level. The results show that the power loss of the driver, especially the on-state loss of the device, can be greatly reduced by using SIC MOSFET. Compared with the driver using silicon-based MOSFET, the loss of the driver using silicon carbide power device can be reduced by more than 64%. The results show that the control driver based on si-cmofet has lower power consumption and higher efficiency. In the future, SIC MOSFET will be widely used.