Abstract
The maximum power point tracking (MPPT) controller is a key part of the photovoltaic (PV) power generation systems, which has an important impact on the conversion efficiency of solar energy into electrical energy. Compared with silicon (Si) power device, silicon carbide (SiC) power device has the characteristics of low switching losses and high working frequency, which can realize the miniaturization and high efficiency of MPPT controller, and has wide application prospect in bipolar PV inverter. This paper analyzed the principle of PV power generation MPPT, described the key parameters selection criteria of SiC MOSFET drive circuit, designed PV power generation MPPT controller based on SiC MOSFET. The experimental results proved the validity of the MPPT controller design, verified SiC MOSFET has the advantages of low switching losses.
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