Abstract
It is well known that field-oxide dishing occurring in STI CMP leads to considerable sidewall and edge-parasitic conduction as well as high electric fields in the gate oxide at the active-area edge. Thus, a closed-form solution for quantitative prediction of oxide dishing is needed. A contact-mechanics-based approach to describe the steady-state oxide dishing occurring in STI CMP process is presented. The theory is validated through comparison with experimental data in the literature. Once validated, the model is used to quantify the effect of pattern geometry on oxide dishing. Oxide dishing is found to be strongly dependent on field-oxide width and reach the maximum value at a certain pattern density.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
