Abstract
Polymer non-volatile memory devices in8 × 8 array cross-bar architecture were fabricated by a non-aqueous direct metal transfer (DMT)method using a two-step thermal treatment. Top electrodes with a linewidth of2 µm were transferred onto the polymer layer by the DMT method. The switchingbehaviour of memory devices fabricated by the DMT method was very similar tothat of devices fabricated by the conventional shadow mask method. Thedevices fabricated using the DMT method showed three orders of magnitude ofon/off ratio with stable resistance switching, demonstrating that the DMT method can be asimple process to fabricate organic memory array devices.
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