Abstract
A new diagnosis method has been developed utilizing back scattered particles for high energy intense ion beams. The CR-39 detector mounted on the uniform back-scatterer was irradiated with 4He2+ ions with an energy 25 MeV/n, which is never recorded as etchable track in CR-39. We found that it is possible to diagnose by analyzing the etch pits on the rear surface of CR-39 that directly contacted on the back-scatterers. It turns out that most of etch pits in the rear surface are made by the backscattered particles by investigating the growth pattern of each etch pit with multi-step etching technique. This method allows simple diagnosis of the ion beam profile and intensity distribution in mixed radiation field such as laser-driven ion acceleration experiments.
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