A detailed simulation study of the performance of -silicon carbide MOSFETs and a comparison with their silicon counterparts

Abstract

We have used a two-dimensional drift-diffusion simulator, augmented by including accurate low-field mobility curves obtained by the Monte Carlo method, to study the operation of SiC MOSFETs both at room and high temperatures. A comparison with Si MOSFETs at room temperature is performed. Although drain current was higher in Si MOSFETs, SiC MOSFETs showed lower saturation conductance values. The dependence of the saturation velocity on the transverse electric field has been introduced in our simulations and its inclusion shown to be important to reliably model SiC MOSFET current and small-signal parameters. High-temperature correct operation of SiC MOSFETs has also been studied.