Abstract
A computational design procedure of a thermoelectric power device using Functionally Graded Materials (FGM) is presented. A model of thermoelectric materials is presented for transport properties of heavily doped semicondutctors, electron and phonon transport coefficients are calculated using band theory. And, a procedure of an elastic thermal stress analysis is presented on a functionally graded thermoelectric device by two-dimensional finite element technique. First, temperature distributions are calculated by two-dimensional non-linear finite element method based on expressions of thermoelectric phenomenon. Next, using temperature distributions, thermal stress distributions are computed by two-dimensional elastic finite element analysis.
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