A Design and Comparative Investigation of Graded Al x Ga 1– x N EBL for W‐B 0.375 GaN/W‐B 0.45 GaN Edge Emitting Laser Diode on AlN Substrate

Abstract

In this paper, we numerically demonstrated the possibility of using wurtzite boron gallium nitride (W-BGaN) as active layers (quantum well and quantum barriers) along with aluminum gallium nitride (AlGaN) to achieve lasing at a deep ultraviolet range at 263 nm for edge emitting laser diode. The laser diode structure simulations were conducted by using the Crosslight-LASTIP software with a self-consistency model for varies quantity calculations. Moreover, multiple designed structures such as full and half have been achieved as well as the study of the effect of grading engineering/techniques at the electron blocking layer for linearly-graded-down and linearly-graded-up grading techniques were also emphasized. As a result, a maximum emitted power of 26 W, a minimum threshold current of 308 mA, a slope efficiency of 2.82 W/A, and a minimum p-type resistivity of 0.228 Ω·cm from the different doping concentrations and geometrical distances were thoroughly observed and jotted down.