Abstract
In this paper, we present a low insertion loss, high isolation, high linearity wideband double-pole-double-throw (DPDT) switch matrix designed in GaAs E/D-mode PHEMT technology. The proposed switch MMIC is designed using series-shunt-series configuration in a ring-type structure with digital drive circuits. The designed switch achieves low insertion loss of 1.8 dB with bandwidth from dc to 12GHz, and a high isolation of 43 dB up to 12GHz. The measured input P1dB of the proposed switch is higher than 30dBm. The chip area is <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$1.8\ \text{mm} \times 1.8$</tex> mm, and consume 3mA current with -5V supply voltage.
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