Abstract
An alternative approach for the calculation of the threshold voltage of an SOI MOSFET, taking into account the potential drop in the silicon substrate, is proposed. The approach is extended to short channel devices and improves the predictions of the characteristics of a fully-depleted SOI MOSFET. The current-voltage characteristics are derived by including substrate effect, mobility degradation and channel length modulation in the current saturation region. The theoretical predictions of the model agree with the experimental data available in the literature.
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