Abstract
An organic thin-film transistor structure is proposed in which a channel is created through formation of an electric dipole layer at the semiconductor–insulator interface. The dipole is composed of mobile carriers, electrons, and holes and results from the modification of gate insulator to allow controlled amounts of gate current to flow in the ON-state. 2-D device simulations are used to show that the proposed structure offers the potential for obtaining significantly higher channel charge and current without requiring higher voltages. It is also shown that these advantages come while maintaining OFF-current and unity gain frequency comparable with conventional transistors.
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