Abstract

As the semiconductor industry continues to evolve, the demand for larger silicon wafers has grown significantly. However, transitioning from traditional 4 and 6-inch wafers to larger sizes poses numerous challenges, especially for smaller semiconductor companies with limited financial resources. This article explores a cost- effective approach to address this transition by modifying a small Czochralski (CZ) puller to grow a larger silicon wafer. The study employed a simulation-based method using 3D transient finite element analysis to evaluate the effects of modifying the CZ puller's B-chamber and thermal shield and applying a cooling jacket. The results show that these modifications can enhance the temperature gradient during crystal growth and improve stability when growing an 8-inch silicon ingot. Practical experiments also highlight the complexities involved in achieving a successful transition to 8-inch wafers, including the need for precise adjustments in gap distances and argon gas volume.

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