Czochralski (CZ) process modification with cooling tube in the response to market Global silicon shortage

Abstract

Recently, the silicon wafer producers, affected by Covid-19 and USA-China competition, looks for new production processes to increase the production. On the other hand, the common parts of CZ puller such as heater, crucible and thermal shield are optimized over time and now the common CZ process is reached to limitation for further improvement. Here, we propose a modified CZ method by adding a cooling tube into the growth zone. The new proposed Cz method is applied to the 8″ crystal growth process. A fully 3D transition model including energy equation, Navier–Stokes equation, surface-to-surface radiation heat transfer, moving mesh and thermal stress equations is implemented. The simulation is performed for both original and new CZ method. It was proved that the new CZ method increases the pulling speed up to 25 %. To ensure about the crystal quality, the thermal stress is compared between original and new proposed CZ method. Although it was found that the thermal stress increases about twice but still the maximum von Mises stress never exceeds the critical value 25 MPa. Additionally, the power consumption is also found to enhance maximum 2 kW under new conditions. To evaluate the model the interface and heater power for the original CZ puller is compared with industrial CZ process and it shows acceptable accuracy.