Abstract
Nowadays quantum-dot cellular automata (QCA) as a nanoscale transistor-less device technology have attained major attention for their prominent features. The circuits constructed by QCA technology owning remarkable decreasing in size, fast switching speed and ultra-low energy consumption. These features can be more different in varied memory structures. Random access memory (RAM) is a kind of data storage devices that allows data to be read or written it’s generally volatile, and used for data that change often. Due to the significance of memory in a digital system, designing and optimization of high-speed RAM in QCA nanotechnology is a substantial subject. So, this paper presents a new structure for QCA-based RAM cell by employing the 3-input rotated majority gate (RMG). Eventually, 1 × 4 RAM is designed by exerting the individual memory cell. The functionality of the proposed design is implemented and assessed using the QCADesigner simulator. The obtained results demonstrated that the designed QCA-based RAM cell is superior to previous structures in terms of delay and cell count.
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