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Abstract
ABSTRACTWe have developed a new method of evaluating Si surface micro-roughness, by forming thin oxide in HCI/H2O2 solution and then measuring the concentration of chlorine atoms or the total charge in this oxide. It is shown that this oxide does not affect the surface micro-roughness, and the surface concentration of chlorine atoms incorporated in this oxide and the total oxide charge are proportional to the surface micro-roughness, as obtained by AFM. From these correlations, it is possible to evaluate the surface microroughness for large areas compared with the areas of AFM measurement.
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