Abstract
A core scheme including dc and capacitance models of amorphous indium gallium zinc oxide thin-film transistors is presented based on terms of surface potential. Due to the intrinsic physical fact, carrier degeneracy is taken into account. A simpler symmetric quadrature version of charge-sheet model is adopted, which offers a new approach to deduce the expressions of current and terminal charges. Through the extensive comparisons between model results and numerical iterations or experimental data, the validity of the proposed models is strongly supported. The simplicity of algorithm and clear physical conception make the model suitable for circuit simulators.
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