Abstract
A comprehensive continuum model is presented for the analysis of high‐density plasma reactors widely used in semiconductor processing. The model couples plasma transport, neutral species dynamics, gas flow, heat transfer, and plasma power coupling from an external source. The governing transport equations are solved along with Maxwell's equations for a multicomponent, multi temperature system with inductively coupled power deposition. The model and code are applied to a nitrogen discharge in an inductively coupled plasma reactor, and the predictions agree well with the experimental data. The effect of self‐consistent modeling of gas flow and gas heat transfer is systematically examined and it is found to affect plasma density and uniformity at low pressures. © 1999 The Electrochemical Society. All rights reserved.
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