Abstract
In deriving theoretical transport controlled growth rates for CVD processes the effect of the temperature gradient close to the reaction surface is usually neglected in order to obtain a simple analytical treatment, and values of gas properties corresponding to some average temperature are taken. A simple consideration of the differential equations for fluid flow and heat and mass transfer shows that one might expect the steep temperature profile commonly encountered at a susceptor surface to lead to a considerable distortion of the diffusion boundary layer and hence of the growth rate. Nevertheless, the agreement between theory based on constant gas property conditions and experiment for various reactor geometries is usually reasonable. In this paper we present an analysis to show why this is so.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
