A computer modeling approach for LSI digital structures

Abstract

The paper presents a novel modeling approach to LSI MOST circuits performed at the gate level. A macromodel is analytically derived and provides a direct relationship between the input function and output response of the gate. This approach or macromodeling has been implemented for over 10 000 devices in LSI with only 32K of computer core and very fast computing time. The method employed relates directly the performance parameters (e.g., turn-on voltage, rise, and fall times, etc.) to the device parameters. An insight into the propagation delay of LSI structures is gained by statistically studying the transient performance of the system using Monte-Carlo techniques. Experimental results give ample evidence of good agreement with the computed results, for which various values of x 0 , oxide thickness, are used.