Abstract
The effects of outdoor temperature and irradiance on the device and performance parameters of thin film amorphous hydrogenated silicon (a-Si:H) module are investigated. An outdoor test facility is installed to perform I-V measurements under different irradiance and temperature conditions. A numerical model considering the effect of series and shunt resistances is developed to determine different module parameters. The device parameters determined from I-V measurements are found to agree well with the corresponding parameters obtained from the developed model. The device parameters extracted from I-V measurements are then employed to investigate device parameters impacts on module performance parameters. Present results indicate that as outdoor temperature increases, the device parameters increase at all irradiance levels studied. Also, the device parameters decrease with increasing irradiance up to 800 W/m2 then the behaviour starts to be vice versa. While, Voc and Isc increase with irradiance but FF and η decrease.
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