A Comprehensive Study of Hot-Carrier Effects in Body-Tied FinFETs

Abstract

Hot-carrier effects in body-tied FinFETs are investigated for the first time. Device degradation by hotcarrier injection (HCI) becomes significant as a fin width (channel thickness) increases. There are two competing conditions to degrade the device by HCI: VG (<0.5VDD) at ISUBmax and VG=VD=VDD. Interface trap generation is dominant at VG at ISUBmax and oxide trap are dominant at VG=VD=VDD. At the narrow fin width, the device is more degraded by the interface trap generation (VG at ISUBmax) rather than by the oxide trap (VG=VD=VDD). However, both mechanisms equally degrade the devices at the wide fin.