Abstract
The dual-direction silicon controlled rectifier (DDSCR) is commonly used to protect input/output (I/O) interface circuits from electrostatic discharge (ESD). This work mainly focuses on the variations of ESD protection capability under harsh environment. Transmission line pulse (TLP) tests are performed on the devices right after gamma-ray irradiation, and the measurements are also conducted at different temperatures. This work gives an insight into the combined effects of total-ionizing dose and ESD stress, as well as the impact of elevated temperature on the DDSCR.
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