Abstract
The dual-direction silicon controlled rectifier (DDSCR) is commonly used to protect input/output (I/O) interface circuits from electrostatic discharge (ESD). This work mainly focuses on the variations of ESD protection capability under harsh environment. Transmission line pulse (TLP) tests are performed on the devices right after gamma-ray irradiation, and the measurements are also conducted at different temperatures. This work gives an insight into the combined effects of total-ionizing dose and ESD stress, as well as the impact of elevated temperature on the DDSCR.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
