Abstract
GaN based high electron mobility transistors (HEMTs) have demonstrated extraordinary features in the applications of high power and high frequency devices. In this paper, we review recent progress in AlGaN/GaN HEMTs, including the following sections. First, challenges in device fabrication and optimizations will be discussed. Then, the latest progress in device fabrication technologies will be presented. Finally, some promising device structures from simulation studies will be discussed.
Highlights
A Comprehensive Review of Recent Progress on GaNFanming Zeng 1 , Judy Xilin An 1, *, Guangnan Zhou 1 , Wenmao Li 1 , Hui Wang 1 , Tianli Duan 2 , Lingli Jiang 1 and Hongyu Yu 1,3,4, *
Nitride-based wide band-gap semiconductors (WBS), such as GaN and related alloys, have been intriguing to high power and high frequency researches and applications over the past two decades, as reviewed in the literatures [1,2,3,4,5,6,7,8,9,10]
[18] to that optimization ofGaN-on-Si epitaxial layers improve the out device the epitaxial quality of materials is related to a key industrial reliability item: the high temperature reliability of AlGaN/GaN high electron mobility transistors (HEMTs)
Summary
Fanming Zeng 1 , Judy Xilin An 1, *, Guangnan Zhou 1 , Wenmao Li 1 , Hui Wang 1 , Tianli Duan 2 , Lingli Jiang 1 and Hongyu Yu 1,3,4, *. Shenzhen Key Laboratory of the Third Generation Semi-conductor, Shenzhen 518055, China. GaN Device Engineering Technology Research Center of Guangdong, Shenzhen 518055, China. Received: 31 October 2018; Accepted: 27 November 2018; Published: 3 December 2018
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