Abstract
The direct vapour transport technique was used to grow novel quaternary In0.15Sn0.85(Se0.95S0.05)2 crystals. Field emission scanning electron microscopy (FESEM), high resolution transmission electron microscopy (HRTEM), and energy dispersive X-ray analysis (EDX) with mapping were used to examine the surface morphology and chemical composition of grown crystals. The structural characterisation of grown crystals was analysed by X-ray diffraction (XRD), selected area electron diffraction (SAED), and Raman spectra. The grown crystals have a hexagonal crystalline structure, as confirmed by the structural characterisations. The direct optical bandgap of a grown crystal having 1.37 eV is obtained from absorption spectra. The current–voltage characteristics were studied within the temperature range of 108 K to 403 K. Also, the hall parameters have been obtained at room temperature. The thermodynamic and kinetic parameters were calculated from TGA, DTA, and DTG curves. The photodetector based on grown In0.15Sn0.85(Se0.95S0.05)2 quaternary crystal exhibits the outstanding self-powered photoresponse. The exhaustive photodetection properties of a photodetector based on a grown In0.15Sn0.85(Se0.95S0.05)2 crystal were examined as functions of various illumination intensities and wavelengths. Trap depth and photodetection parameters were also calculated.
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