Abstract
A new composite two-dimensional process/two-dimensional device simulation system (TOPMODE) (FOOTNOTE: Standing for TOshiba Simulation Program for MOS DEvice.) has been developed to provide a straightforward means of predicting small-geometry device characteristics using the fabrication process sequence. Using TOP-MODE, an analysis of the anomalous subthreshold drain current peculiar to buried oxide isolation (BOX) structure device has been conducted and the physical mechanism is attributed to the impurity profile and other geometry effects. Input to TOPMODE is specially designed using key words language as a user-oriented CAD tool. Plotting functions for multidimensional perspective drawing of output results have also been installed to provide a better visual aid.
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