A Composite Free Layer for High Density Magnetic Random Access Memory with Low Writing Field

H Meng,J J Wang

doi:10.1109/intmag.2006.374956

A Composite Free Layer for High Density Magnetic Random Access Memory with Low Writing Field

H Meng, J J Wang

https://doi.org/10.1109/intmag.2006.374956

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Publication Date: May 1, 2006

Citations: 1

Affiliation: University of Minnesota

#High Density Magnetic Random Access #Density Magnetic Random Access Memory + Show 8 more

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Abstract

In this work, a new approach is demonstrated to effectively lower the magnetic random access memory (MRAM) writing field while the memory cell thermal stability is still maintained at a safe level. The soft layer is an FeSiO granular layer and the hard layer is a CoFe/Pt multilayer.

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