A complex x-ray characterization of epitaxially grown high-K gate dielectrics

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Different x-ray techniques are used to characterize Pr2O3 layers epitaxially grown on Si substrates. X-ray reflectometry is the preferred technique to determine the layer thickness and to detect and characterize possible interface layers. With standard x-ray diffraction (XRD), we found for 100 Si substrates that Pr2O3 grows in its cubic phase with the 110 direction perpendicular to the surface, while the hexagonal phase in 0001 orientation is preferred for 111 Si. In the thickness range of microelectronics applications, Pr2O3 layers can be considered as well-ordered heteroepitaxial structures. The relaxation of the oxide layer from pseudomorphism to bulk behaviour was studied in the technologically important thickness range (1–10 nm) by synchrotron radiation grazing incidence XRD.