A complete substrate current model including band-to-band tunneling current for circuit simulation

Abstract

A simple and accurate substrate current model that is valid in the whole operation region of a MOSFET with various dimensions is presented. The theory is based on hot-carrier induced impact ionization and band-to-band tunneling (BTBT). All the parameters in the model can be assigned proper physical meanings and are easily extracted from the measurement data. The model is incorporated in a Mitsubishi Circuit Simulator (MICS). Both the accuracy and the efficiency of the model are shown by experiment and simulation, and hence make the simulator useful for designers who care about low power applications. >