A complete analytic surface potential-based core model for intrinsic nanowire surrounding-gate MOSFETs

Abstract

An analytic surface potential-based non-charge-sheet core model for intrinsic nanowire surrounding-gate (SRG) MOSFETs is presented in this paper. Starting from the Poisson–Boltzmann equation in the cylindrical SRG MOSFETs, a surface potential equation is derived. Based on the exact surface potential solutions evaluated at the source and drain ends, a single set of the analytic drain current expression is obtained from the Pao–Sah's dual integral without the charge-sheet approximation. The analytical trans-capacitance model is also obtained from Ward–Dutton's charge partition method within the surface potential-based model framework. It is shown that the proposed drain current model and trans-capacitance model are valid for all operation regions, allowing the nanowire SRG MOSFET characteristics to be adequately described from the linear to saturation and from the sub-threshold to strong inversion region without any fitting-parameters. Moreover, the model prediction is verified by the three-dimensional numerical simulation.