A comparison of the trap properties and locations within GaAs field effect transistors measured under different bias conditions

Abstract

The activation energy and capture cross section of traps found in GaAs field effect transistors (GaAs FETs) have been measured with both ohmic channel and current saturation bias using a variety of transient, frequency dispersion, and noise spectroscopy techniques. With current saturation bias these effects have been seen in both the transconductance and the output conductance. The results for all methods and bias conditions are compared with those found by others. The relative sensitivity of the techniques and the location of the traps are discussed.