Abstract
For over a decade, single-junction perovskite solar cells (PSCs) have experienced an unprecedent increase in efficiencies and even offer opportunities to surpass the Shockley–Queisser limit in multijunction configuration. There is consequently an intense need for easily processable semi-transparent PSCs as a basis of affordable tandems. The current study reports the comparison of negative-intrinsic-positive (NIP) and positive-intrinsic-negative (PIN) architectures based on CH3NH3PbI3{Cl}-based perovskite. Both devices could be prepared with the same N-type (SnO2 nanoparticles) and P-type (poly-triarylamine (PTAA) polymer) materials. Each layer (except for electrodes) was deposited using solvent-based low temperature processes, contrasting with other literature studies, especially SnO2 for PIN-type purposes. A thorough experimental comparison of the two architectures reveals rather similar optical and structural properties for perovskites, whether deposited on an N- or P-type underlayer, with also comparable efficiencies in the final devices. A compatible deposition process for sputtered indium tin oxide (ITO) as a semi-transparent electrode was then performed for both architectures. Upon varying the illuminated devices’ side, the semi-transparent cells exhibited different photocurrent behaviors, the magnitude of which depended on the device’s architecture. In conclusion, despite slightly better efficiencies for the semi-transparent NIP-type devices, the semi-transparent PIN-type counterparts also appear to be optically attractive for (two-terminal) tandem applications.
Highlights
ABX3 perovskite materials as absorber layers have facilitated sensational growth in the photovoltaic (PV) performance of solar cells [1]
A comparison of the perovskite layers was performed depending on the sublayer nature
Very similar optical bandgaps at 1.62 eV were obtained by the Tauc plot method
Summary
ABX3 perovskite materials as absorber layers have facilitated sensational growth in the photovoltaic (PV) performance of solar cells [1]. These materials possess outstanding optoelectronic properties, unexpected from low temperature solution process routes [2]. Their high defect tolerance [3] and indirect bandgap features (almost direct with the Rashba effect [4]), combined with a weak exciton binding energy at room temperature [5], induce low bulk and surface recombination [6,7], long carrier diffusion lengths [8] and bipolar transport with high charge carrier mobilities [9]. Perovskite materials have garnered great interest for tandem applications [16,17], especially with silicon cells [18,19,20,21,22], the main
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