Abstract
AbstractSingle‐scattering Monte Carlo electron trajectory simulation has been implemented for the calculation of characteristic x‐ray production in thin films on substrates. The validity of the simulation has been verified by comparison with EDX results from various thicknesses of gold and silver films on silicon substrates over a range of electron energies. The simulation has been applied to binary thin films on substrates, and computational methods have been devised to eliminate the lengthy graphical techniques for film thickness and composition determination used previously. A comparison of calculated film compositions has been made with composition obtained by surface analytical techniques.
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