Abstract
Low pressure MOVPE has been used for the growth of 1.58 μm GRIN-SCH strained Ga x In 1- x As ( x = 0.30) MQW laser structures. The GRIN-SCH region is a continuous grade between the quaternary compositions GaInAsP (λ g = 1.07 μm) and GaInAsP (λ g = 1.25 μm), and was achieved by simultaneous gas flow ramping of the group III and group V reagents. For comparison, GRIN-SCH material with 65 Å GaInAs lattice matched ( x = 0.47) quantum wells was grown. The GRIN-SCH is compared to similar structures containing strained and unstrained quantum well material incorporating single step confinement layers of GaInAsP (λ g = 1.25 μm). Device results from broad area, oxide isolated metal-MQW lasers show that higher T 0 values (62 K) are obtained when the material contains a continuous GRIN-SCH, as opposed to a step confinement region. When used in conjunction with strained quantum wells ( x = 0.30) a threshold current density of 650 A/cm 2 is obtained for the GRIN-SCH material, a significantly lower value than is observed for the step confinement material.
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