A Comparison of Lattice-Matched GaInNAs and Metamorphic InGaAs Photodetector Devices

Abstract

AbstractThe dilute-nitride GaInNAs shows great promise in becoming the next choice for 1 eV photodetector and multi-junction photovoltaic applications due to the ability for it to be grown lattice-matched on GaAs substrates. This paper will present results from high-power photodetector devices fabricated from high-quality thick GaInNAs and metamorphic InGaAs materials grown by MBE. The internal quantum efficiency of rear-illuminated PIN photodiodes with thick GaInNAs films as the intrinsic region (roughly 62% at 1064 nm) is somewhat lower than comparable metamorphic InGaAs devices (roughly 75% at 1064 nm). However, the dark current density of the GaInNAs devices is also somewhat lower (roughly 3 μA/cm2 at 2×104 V/cm bias) than the InGaAs devices (roughly 20 μA/cm2 at 2×104 V/cm bias), while the breakdown voltages (beyond -20 V) are comparable. Materials characterization of each structure, including x-ray diffraction and room-temperature as well as temperature-dependent photoluminescence studies will be presented in order to explain the characteristics observed in the devices composed of the two different material systems.