Abstract
In the present paper, a theoretical investigation has been carried out to estimate the lifetime of the minority carriers of n-InAsSb arising out of various recombination mechanisms e.g. radiative recombination, SRH recombination and Auger recombination. It is seen that among the three dominant recombination mechanisms Auger recombination is most significant at or near room temperature when the doping concentration ranges from 10 23 to 10 25 m −3. The high value of Auger recombination lifetime of carries at room temperature would adversely affect the performance of optoelectronic devices based on InAsSb.
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