Abstract
2.4-GHz CMOS LNA and mixer for a high performance wireless LAN chipset fabricated in a 0.25-/spl mu/m foundry digital CMOS process were compared to the SiGe bipolar circuits using the same topology and almost identical schematic. The CMOS circuits were housed in the same package with the same pinout, and tested on the same PC board under similar bias conditions as those for the SiGe bipolar circuits. The CMOS LNA and mixer can match the SiGe performance with a 15 to 20% increase in power consumption, and a direct migration from bipolar to CMOS can be realized without major changes in circuits and systems.
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