Abstract
Summary form only given. Transport characteristics for SOI produced by zone melt recrystallization (ZMR) methods have been measured and compared to those for separation by implantation of oxygen (SIMOX) and bulk Si. Many of the characteristics are similar to those reported for SIMOX material. Evidence of a deep acceptor level was found in graphite-stripe ZMR, and the low-temperature transport characteristics of e-beam ZMR were found to be degraded by mosaic spread. Thermal donor formation in ZMR SOI has also been examined and is discussed. >
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