Abstract
Relaxation of ion-induced strain in crystalline InP is compared with structural relaxation of amorphous InP. Crystalline InP was bombarded with Se ions at low fluence to produce a damaged surface layer. The room temperature evolution of strain in this layer was determined by high-resolution x-ray diffraction and compared to the evolution of the defect-activated viscosity of amorphous InP during similar room temperature structural relaxation. Both processes can be described by double exponential decay functions with characteristic times of a few hours to a few days.
Published Version
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